Line 和 DUV 分别用什么样式的光阻？各个光阻特性如何？

To achieve sub-wavelength lithography results,resist rechnology - like the phase shifting masks,scanner optics and inspection techniques- is pushed to its absolute limit. Most importantly, the fundamental structrueof resists must change -  from i-line's novolac-based resists to CA hydroxystyrene-based resist at 248nm,to cyclic olefin or acrylate-based resists at 193 nm,to an as-yt-undermined polymer family at 157nm lithography.

The CA resists based on polyhydroxystyrene(PHOST) polymer used at 248nm represent a radical departure from i-line's novolac-based resist chemistry. The HOST polymer backbone has protecting groups that become deprotected when a photoacid generator(PAG) decomposes upon exposure to 248 nm wavelength light, beginning a catalytic chemical reaction described as chemical amplification. The deprotection mechanism causes a polarity change in the resist polymer from lipophilic to hydrophilic,making exposed regions soluble in developer,typically TMAH(tetramethyl-ammonium hydroxide).